光电探测器
肖特基二极管
光电子学
探测器
材料科学
紫外线
二极管
纳米技术
功勋
工程物理
物理
光学
作者
Anamika Singh Pratiyush,Sriram Krishnamoorthy,R. Muralidharan,Siddharth Rajan,Digbijoy N. Nath
出处
期刊:Elsevier eBooks
[Elsevier]
日期:2019-01-01
卷期号:: 369-399
被引量:55
标识
DOI:10.1016/b978-0-12-814521-0.00016-6
摘要
An overview of β-Ga2O3-based UV photodetectors (PD) as well as their status and promises are presented in this chapter. UV detectors and their applications are highlighted in the introduction followed by a brief discussion on β-Ga2O3 and its many potentials and challenges. The figures of merit for a PD are touched upon, especially from the point of view of UV detection. β-Ga2O3 UV detector configurations such as metal-semiconductor-metal (MSM) and Schottky diodes are discussed, and their recent advances and state-of-the-art results are presented in parallel. A comparison in terms of device performance between β-Ga2O3 and the competing III-nitride technology for UV detection is also highlighted. Finally, the future outlook and challenges associated with this emerging UV technology are summarized.
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