光电探测器
钙钛矿(结构)
异质结
材料科学
光电子学
卤化物
吸收(声学)
光敏性
暗电流
比探测率
化学
无机化学
结晶学
复合材料
作者
Fobao Huang,Yingquan Peng,Guohan Liu
标识
DOI:10.1021/acs.jpcc.9b00278
摘要
Organolead halide perovskite has recently emerged as a star material for various photoelectronic devices owing to its excellent optical and electronic properties. However, it is challenging to develop a perovskite-based photodetector with response across the UV–vis–NIR spectrum due to the lack of absorption in the NIR region for perovskite materials. Herein, we report a broadband photodetector based on the MAPbI3/SnPc heterostructure with mutual-complementary absorption spectra, extending the photoresponse from UV–vis to the NIR region because of the dominant absorption of the SnPc. The ultralow dark current of ∼0.01 nA is obtained and the ultrahigh photosensitivity is up to 105, which is attributed to the high dark resistance and the high electron injection barrier of the heterostructure, and the enhanced photoresponse by the heterostructure architecture. The outstanding sensitivity of our broadband photodetector can be comparable or superior to that of some inorganic, organic, and perovskite photodetectors reported previously. This work provides a route to designing high-performance broadband photodetectors with low noise and high sensitivity.
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