材料科学
多物理
碳化硅
功率半导体器件
绝缘栅双极晶体管
双极结晶体管
结温
晶体管
MOSFET
光电子学
半导体器件
半导体
电气工程
硅
电源模块
场效应晶体管
电子工程
有限元法
功率(物理)
工程类
电压
图层(电子)
物理
纳米技术
结构工程
量子力学
冶金
作者
Mohsen Akbari,Amir Sajjad Bahman,Paula Diaz Reigosa,Lorenzo Ceccarelli,Francesco Iannuzzo,Mohammad Tavakoli Bina
标识
DOI:10.1109/therminic.2018.8593307
摘要
Being the power loss and temperature distribution in power-electronics semiconductor dies influenced by one another, this paper demonstrates that neglecting such an effect can result in significant errors in electro-thermal simulations and mistaken calculation of junction temperatures.Two case studies on different semiconductor technologies, namely Silicon Insulated-Gate Bipolar Transistors (IGBTs) and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are presented to corroborate the paper findings.Resultant temperature distributions are obtained by a proposed flowchart, which accepts the corresponding power dissipation input from MATLAB environment and employs a finite element based analysis implemented in COMSOL Multiphysics environment.
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