Gallium Oxide Power Device Technologies

Gallium oxide (Ga 2 O 3 ) is an emerging ultrawide bandgap semiconductor having excellent physical properties suitable for applications to power switching devices. In this article, after introducing material properties and growth technologies of G a 2O 3 , state-of-the-art vertical Ga 2 O 3 field-effect transistors and Schottky barrier diodes are discussed.