单层
硫代磷酸盐
铁电性
材料科学
凝聚态物理
异质结
电介质
结晶学
纳米技术
光电子学
化学
物理
有机化学
作者
Guoliang Yu,Anlian Pan,Mingxing Chen
出处
期刊:Physical review
日期:2021-12-06
卷期号:104 (22)
被引量:11
标识
DOI:10.1103/physrevb.104.224102
摘要
Two-dimensional ferroelectrics (FEs) are promising in the miniaturization of memory devices with ultra-high-density data storage and low power consumption. However, many thiophosphate monolayers, i.e., analogs of ${\mathrm{CuInP}}_{2}{\mathrm{S}}_{6}$ and referred to as ${\mathrm{ABP}}_{2}{\mathrm{X}}_{6}$, lose ferroelectricity and instead exhibit an antiferroelectric (AFE) or paraelectric ordering. We propose to tune the AFE ${\mathrm{ABP}}_{2}{\mathrm{X}}_{6}$ monolayers into the FE ordering through interface engineering. The mechanism is that there are couplings between the charge polarizations of the ${\mathrm{ABP}}_{2}{\mathrm{X}}_{6}$ monolayers and the local dipoles as well as the induced electronic polarizations in the substrate which have a tendency to stabilize the FE ordering. We further perform first-principles calculations for ${\mathrm{CuInP}}_{2}{\mathrm{Se}}_{6}$ and ${\mathrm{CuCrP}}_{2}{\mathrm{S}}_{6}$ monolayers and their van der Waals heterostructures. We find that an AFE ${\mathrm{CuInP}}_{2}{\mathrm{Se}}_{6}$ monolayer becomes FE as interfaced with graphene, ${\mathrm{MoS}}_{2}$, and h-BN monolayers. In contrast, the ${\mathrm{CuCrP}}_{2}{\mathrm{S}}_{6}$ monolayer remains AFE since there is a large energy difference between the AFE and FE phases. Interfacing it with a ${\mathrm{MoTe}}_{2}$ monolayer induces a metal-insulator transition for the heterostructure, whereas interfacing with a polar surface MgO(111) can drive it into FE. The interfacing effect can also be used to manipulate the FE properties of ${\mathrm{ABP}}_{2}{\mathrm{X}}_{6}$ multilayers. We further find that the AFE-to-FE transition is electrically switchable in these systems. In particular, it is accompanied by an indirect-direct band-gap transition for the ${\mathrm{CuInP}}_{2}{\mathrm{Se}}_{6}$ monolayer. Our study offers an effective approach to tune the FE and electronic properties of ${\mathrm{ABP}}_{2}{\mathrm{X}}_{6}$ thin films for applications in electronics and optoelectronics.
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