Formation of ITO Thin Films by MF Magnetron Sputtering for Solar Cells Application

The magnetron sputtering process was used to formation of ITO thin films on cold glass substrates (room temperature) in an argon atmosphere. Studies the effect of deposition time on electrophysical and optical properties were carried out. ITO films were obtained by operating a magnetron in a pulsed mode with an average frequency of 100 kHz(MF mode) in an oxygen-free environment. The power of the plasma discharge and the operating pressure were 150 W and $2\cdot 10^{-3}$ mbar, accordingly. The deposition time varied from 2 min to 8 min. ITO films with a thickness from 62 nm to 405 nm were obtained. The minimum electrical resistivity was ${\mathrm {5.21\cdot 10^{-4}Ohm\cdot cm}}$ for film with a thickness of 405 nm. The concentration and mobility of charge carriers was 3.69$\cdot 10^{20}\mathrm{cm}^{-3}$ and 32.4 c$\mathrm{m}^{2}/{\mathrm {V\cdot s}}$, respectively. This is the result of improved crystallinity and increased oxygen vacancies, providing the presence of conduction electrons. The average optical transmission of thin ITO films was about SO % in the visible spectrum. The results obtained can be used to create the transparent conducting electrodes for solar cells on the glass and flexible substrates.