低噪声放大器
CMOS芯片
噪声系数
电气工程
放大器
噪音(视频)
电子工程
物理
计算机科学
工程类
图像(数学)
人工智能
作者
D.K. Shaeffer,T.H. Lee
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:1997-05-01
卷期号:32 (5): 745-759
被引量:1475
摘要
A 1.5-GHz low noise amplifier (LNA), intended for use in a global positioning system (GPS) receiver, has been implemented in a standard 0.6-/spl mu/m CMOS process. The amplifier provides a forward gain (S21) of 22 dB with a noise figure of only 3.5 dB while drawing 30 mW from a 1.5 V supply. In this paper, we present a detailed analysis of the LNA architecture, including a discussion on the effects of induced gate noise in MOS devices.
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