Boosting the Optoelectronic Performance by Regulating Exciton Behaviors in a Porous Semiconductive Metal–Organic Framework

光电流 金属有机骨架 光电子学 激子 化学 有机半导体 纳米技术 光电效应 材料科学 半导体 物理化学 量子力学 物理 吸附
作者
Chujun Liang,Liwei Cheng,Shitong Zhang,Sirui Yang,Wei Liu,Jian Xie,Ming‐De Li,Zhifang Chai,Yaxing Wang,Shuao Wang
出处
期刊:Journal of the American Chemical Society [American Chemical Society]
卷期号:144 (5): 2189-2196 被引量:64
标识
DOI:10.1021/jacs.1c11150
摘要

Exciton behaviors including exciton formation and dissociation dynamics play an essential role in the optoelectronic performance of semiconductive materials but remain unexplored in semiconductive metal-organic frameworks (MOFs). Herein, we reveal that the exciton behaviors in semiconductive MOFs can be regulated by framework-guest interactions, a feature often not achievable in traditional inorganic or organic semiconductors. Incorporation of the electron-deficient molecule within the pores of a terbium-based semiconductive MOF (Tb2L2·4H2O·6DMF, L = TATAB3-, 4,4',4″-s-triazine-1,3,5-triyltri-p-aminobenzoate, DMF = N,N-dimethylformamide) results in efficient energy transfer from the MOF skeleton to molecular acceptors, with a yield of up to 77.4%. This interaction facilitates distinctive exciton type conversion, giving rise to modified conductivity and photoelectric performance. We further fabricated a MOF-based X-ray detection device to demonstrate how the new architecture bolsters the optoelectronic efficiency, which outperforms the properties of parent semiconductive MOFs, with more than 60 times and 40 times enhancement of the photocurrent on-off ratio and detection sensitivity, respectively. With judiciously optimized exciton behaviors, the detection device exhibits a high sensitivity of 51.9 μC Gyair-1 cm-2 and records a charge carrier mobility-lifetime product of 1.12 × 10-3 cm2 V-1 among MOF-based X-ray detectors, which are competitive with values for commercially available detectors. These findings demonstrate a rational synthetic approach to designing exciton arrangements to improve the optoelectronic efficiency of semiconductive MOFs.
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