材料科学
薄膜晶体管
兴奋剂
阈值电压
空位缺陷
分析化学(期刊)
铪
光电子学
晶体管
凝聚态物理
电气工程
电压
锆
纳米技术
化学
物理
冶金
图层(电子)
工程类
色谱法
作者
Chuanxin Huang,Jun Li,Yi-Zhou Fu,Jianhua Zhang,Xue-Yin Jiang,Zhilin Zhang
标识
DOI:10.1109/ted.2016.2589240
摘要
In this paper, the highly improved negative bias illumination stress (NBIS) stability of zinc-tin-oxide (ZTO) thin-film transistors (TFTs) is achieved by Hf doping, using dual-target magnetron cosputtering system. Compared with a large negative threshold voltage shift (ΔV T ) of 9 V in pristine ZTO TFT, the Hf-doped ZTO TFTs shows superior stability and device D only shows 1.9 V negative ΔV T under the same NBIS. The enhancement in NBIS stability of Hf-doped ZTO TFTs is attributed to a lower oxygen vacancy concentrations and a fewer interface trap states suppressed by Hf ion. The decrease of oxygen vacancy concentrations and interface trap states are confirmed by X-ray photoelectron spectroscopy measurement and capacitance voltage (C-V) measurement, respectively. It is consistent with trap density extracted from temperature-dependent field-effect measurements, which verifies further the factor of the improvement of in NBIS stability of Hf-doped ZTO TFTs.
科研通智能强力驱动
Strongly Powered by AbleSci AI