材料科学
碳化硅
飞秒
衰减系数
折射率
光电子学
吸收(声学)
双光子吸收
激光器
超短脉冲
半导体
折射
非线性光学
光学
物理
复合材料
作者
Xiao Guo,Zeyu Peng,Pengbo Ding,Long Li,Xinyi Chen,Haoyun Wei,Zhen Tong,Liang Guo
摘要
Silicon carbide (SiC), which is the leading representative of the third-generation of semiconductors, possesses many excellent physical properties. However, its advantages also incur difficulties in processing, which calls for special processing techniques, such as femtosecond laser machining. In addition, SiC has shown unprecedented potential for optoelectronic applications. Knowledge of the nonlinear absorption coefficient and the nonlinear refractive index coefficient of SiC is required in both of the fields. In this work, the nonlinear absorption coefficient and the nonlinear refractive index coefficient of semi-insulating (SI) 6H-SiC and SI 4H-SiC, the most pervasive SiC polytypes, are measured in an extensive spectral range from 400 nm to 1000 nm with the Z-scan technique. Besides, the spectral dependence of the nonlinear optical properties is analyzed, facilitated by linear absorption spectrum. Especially, two-photon absorption (2PA) and three-photon absorption (3PA) coefficients of SI 6H-SiC and SI 4H-SiC are characterized in the respective spectral ranges. From the characterization of SiC, we can observe self-focusing phenomenon for nonlinear refraction. In the end, we unravel the potential of SiC for ultrafast all-optical switching based on the measured nonlinear optical properties.
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