材料科学
兴奋剂
硼
退火(玻璃)
硅
制作
多晶硅
光电子学
电阻率和电导率
形成气体
微晶
钝化
纳米技术
复合材料
冶金
图层(电子)
电气工程
化学
病理
有机化学
工程类
替代医学
薄膜晶体管
医学
作者
Zetao Ding,Thien N. Truong,Hieu T. Nguyen,Di Yan,Xinyu Zhang,Jie Yang,Zhao Wang,Peiting Zheng,Yimao Wan,Daniel Macdonald,Josua Stückelberger
出处
期刊:ACS applied energy materials
[American Chemical Society]
日期:2021-04-28
卷期号:4 (5): 4993-4999
被引量:9
标识
DOI:10.1021/acsaem.1c00550
摘要
Herein, we fabricate and characterize p-type passivating contacts based on industrial intrinsic polycrystalline silicon (poly-Si)/thermal-SiOx/n-type crystalline Si (c-Si) substrates using a spin-on doping technique. The impacts of drive-in temperature, drive-in dwell time, and intrinsic poly-Si thickness on the boron-doped poly-Si passivating contacts are investigated. First, the contact passivation quality improves with an increasing thermal budget (<950 °C) but then decreases again for excessive thermal annealing (>950 °C). Second, the thickness of the intrinsic poly-Si film shows only a little impact on the performance. After a hydrogenation treatment by depositing an AlOx/SiNx stack and subsequent annealing in forming gas, the optimized poly-Si passivating contacts show an implied open-circuit voltage (iVoc) > 720 mV, together with a contact resistivity (ρc) below 5 mΩ cm2. These results demonstrate that boron spin-on doping is a promising alternative to the conventional BBr3 thermal diffusion for the fabrication of p-type poly-Si passivating contacts.
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