电子顺磁共振
退火(玻璃)
氘
硅
离解(化学)
材料科学
分析化学(期刊)
彭宁离子阱
消灭
电子
动力学
核磁共振
原子物理学
结晶学
化学
光电子学
物理化学
冶金
物理
色谱法
量子力学
作者
Hisashi Fukuda,Tomo Ueno,Hiroshi Kawarada,Iwao Ohdomari
摘要
Anneal kinetics of the SiO 2 /Si(100) interface defects of 5-nm-thick SiO 2 films have been investigated through comparison of the electron spin resonance (ESR) center with the interface trap density D i t . The ESR signal showed two distinct defects (so-called P b0 and P b1 ) at the SiO 2 /Si(100) interface: These P b0 and P b1 defects are annihilated by a low-temperature (500°C) deuterium (D 2 ) anneal. By contrast, the D 2 anneal at 900°C causes an increase in the number of the defects after a decrease at the initial stage (< 10 s). We conclude that there are annihilation and dissociation processes causing the P b0 and P b1 defects, dependent on the D 2 anneal time and temperature.
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