跨导
材料科学
钻石
MOSFET
场效应晶体管
光电子学
钝化
半导体
硅
氢
兴奋剂
晶体管
氧化物
金属
纳米技术
图层(电子)
电气工程
化学
冶金
有机化学
电压
工程类
作者
A. Hokazono,Kazuo Tsugawa,H Umezana,K. Kitatani,Hiroshi Kawarada
标识
DOI:10.1016/s0038-1101(99)00090-8
摘要
Metal-oxide-semiconductor field effect transistors (MOSFETs) with a surface p-channel have been fabricated on hydrogen-terminated diamond (001) surfaces without doping. The maximum transconductance of the device with the gate length of 6 μm is 16 mS/mm, which is the highest in diamond MOSFETs and comparable to that of silicon n-channel MOSFET with the same gate length. The relatively high transconductance is due to the low density of surface states on hydrogen-terminated diamond. The diamond MOSFETs operate at the temperatures of up to 330°C in air without any passivation of the device surfaces.
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