带隙基准
温度系数
CMOS芯片
电容器
曲率
电子线路
材料科学
修剪
温度测量
电子工程
光电子学
电气工程
电压基准
物理
计算机科学
工程类
电压
数学
量子力学
几何学
操作系统
跌落电压
作者
Bongsob Song,P.R. Gray
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:1983-12-01
卷期号:18 (6): 634-643
被引量:309
标识
DOI:10.1109/jssc.1983.1052013
摘要
A precision curvature-compensated switched-capacitor bandgap reference is described which uses a standard digital CMOS process and achieves temperature stability significantly lower than has previously been reported for CMOS circuits. The theoretically achievable temperature coefficient approaches 10 ppm//spl deg/C over the commercial temperature range and uses a straightforward room temperature trim procedure. Experimental data from monolithic prototype samples are presented which are consistent with theoretical predictions. The experimental prototype circuit occupies 3500 mil/SUP 2/ and dissipates 12 mW with /spl plusmn/5 V power supplies. The proposed reference is believed to be suited for use in monolithic data acquisition systems with resolutions of 10 to 12 bits.
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