材料科学
等离子体
压力(语言学)
栅氧化层
氧化物
沉积(地质)
光电子学
降级(电信)
晶体管
图层(电子)
复合材料
分析化学(期刊)
电子工程
化学
电气工程
冶金
电压
色谱法
物理
古生物学
哲学
工程类
生物
量子力学
语言学
沉积物
作者
Xi Li,Peng Wang,Jiao Bu,Yuwei Liu,Gang Cao,Yanling Shi,Chunling Liu,Fei Li,Lingling Sun
出处
期刊:ECS transactions
[The Electrochemical Society]
日期:2010-11-23
卷期号:27 (1): 359-364
摘要
For its stability and relatively lower K value, FSG (fluorine silica glass) is widely used in 0.18μm and below VLSI process. In this paper, the plasma charging damage on 30Aå gate oxide from the high-density-plasma deposition (HDP) of FSG is investigated. Positive and negative nondestructive JTDDB stress is applied to fresh transistors to simulate the plasma charging current. According to the results comparison, positive plasma stress at the end of the HDP-CVD FSG deposition is found to be the major cause of damage. The damage is located near the Gate/SiO2 interface. By increasing the FSG thickness, the damage is effectively suppressed.
科研通智能强力驱动
Strongly Powered by AbleSci AI