同质结
光电子学
量子隧道
材料科学
阈下摆动
异质结
晶体管
二极管
氮化镓
场效应晶体管
共发射极
纳米技术
图层(电子)
电气工程
电压
工程类
作者
Alexander Chaney,Henryk Turski,Kazuki Nomoto,Zongyang Hu,Jimy Encomendero,Sergei Rouvimov,Tatyana Orlova,Patrick Fay,Alan Seabaugh,Huili Grace Xing,Debdeep Jena
摘要
This report showcases a vertical tunnel field effect transistor (TFET) fabricated from a GaN/InGaN heterostructure and compares it to a gated vertical GaN p-n diode. By including a thin InGaN layer, the interband tunneling in the TFET is increased compared to the gated homojunction diode. This leads to an increased drain current of 57 μA/μm and a reduced subthreshold swing of 102 mV/dec, from 240 mV/dec. However, trap assisted tunneling prevents devices from realizing subthreshold slopes below the Boltzmann limit of 60 mV/dec. Nevertheless, this work shows the capability of tunnel field effect transistors to be realized in GaN by taking advantage of the spontaneous and piezoelectric polarization in the III-N material system.
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