蓝宝石
材料科学
无定形固体
结晶度
阳极连接
铝
化学键
图层(电子)
氧化铝
透射电子显微镜
蓝宝石上的硅
复合材料
结晶学
纳米技术
硅
冶金
光学
化学
有机化学
激光器
物理
绝缘体上的硅
作者
Jun Utsumi,Ryo Takigawa
标识
DOI:10.1016/j.scriptamat.2020.09.005
摘要
We have investigated the surface activated bonding (SAB) of deposited Al2O3 films by chemical vapor deposition under a short-time activated condition at room temperature. Although the surface energy for bonding of Al2O3 films was very low, that of Al2O3 film/sapphire bonding was approximately 1 J m − 2 and more than 2 J m − 2 for sapphire/sapphire bonding. Transmission electron microscopy showed an amorphous-like intermediate layer approximately 1 nm thick, observed at the bonding interface of Al2O3/Al2O3, but not in the bonding of Al2O3/sapphire, which suggests that the crystallinity of the Al2O3 film affects the bonding of Al2O3.
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