铟
格式化
电化学
氧化物
氧气
空位缺陷
无机化学
化学
材料科学
化学工程
电极
光电子学
冶金
催化作用
物理化学
有机化学
结晶学
工程类
作者
Tengfei Ma,Zihao Jiao,Haoran Qiu,Feng Wang,Ya Liu,Liejin Guo
出处
期刊:eScience
[Elsevier]
日期:2024-02-01
卷期号:: 100246-100246
被引量:3
标识
DOI:10.1016/j.esci.2024.100246
摘要
Indium-based oxides are promising electrocatalysts for producing formate via CO2 reduction reaction, in which *OCHO is considered the key intermediate. Here, we identified that the *COOH pathway could be preferential to produce formate on In2O3 of In/In2O3 heterojunction due to the synergistic effect of oxygen species and vacancy. Specifically, *CO2 and *COOH were observed on In2O3 and related to formate production by in situ Raman spectroscopy. The theoretical calculations further demonstrated that the energy barrier of the *COOH formation on In2O3 was decreased in the presence of oxygen vacancy, similar to or lower than that of the *OCHO formation on the In surface. As a result, a formate selectivity of over 90% was obtained on prepared In/In2O3 heterojunction with 343 ± 7 mA cm–2 partial current density. Furthermore, when using a Si-based photovoltaic as an energy supplier, 10.11% solar–to–fuel energy efficiency was achieved.
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