极紫外光刻
抵抗
锡
光刻
材料科学
第2组金属有机化学
平版印刷术
纳米技术
化学
光电子学
有机化学
冶金
分子
图层(电子)
作者
Gayoung Lim,Kangsik Lee,Chawon Koh,Tsunehiro Nishi,Hyo Jae Yoon
标识
DOI:10.1021/acsmaterialsau.4c00010
摘要
We report a new photoresist based on a multinuclear tin-based macrocyclic complex and its performance for extreme UV (EUV) photolithography. The new photoresist has a trinuclear macrocyclic structure containing three salicylhydroxamic acid ligands and six Sn-CH
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