拓扑绝缘体
薄膜
材料科学
砷化物
绝缘体(电)
凝聚态物理
砷化镓
光电子学
物理
纳米技术
作者
Alexander C. Lygo,Binghao Guo,Arman Rashidi,Victor Huang,Pablo Cuadros-Romero,Susanne Stemmer
标识
DOI:10.1103/physrevlett.130.046201
摘要
Utilizing surface state hybridization, a 2D topological insulator state has been demonstrated in 20 nm thin film of a 3D topological insulator, Cd${}_{3}$As${}_{2}$, using gate-voltage-tuned magnetotransport measurements.
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