A planarized Mo/ZnS multilayer film for infrared stealth at high temperature

The ability to selectively emit in specific spectral bands, known as spectral selective emission, is highly valuable in thermal photovoltaic systems, infrared stealth, radiation heat dissipation, and other fields. This paper presents a planarized molybdenum/zinc sulfide (Mo/ZnS) multilayer film design to achieve infrared stealth under high temperatures. By utilizing the distinctive radiation characteristics of an ultra-thin Mo layer and impedance matching, selective emission in the infrared band can be achieved. The fabricated multilayer films have low emissivity in the atmospheric window (ε(3–5μm) = 0.19; ε(8–14μm) = 0.29), but high emissivity in the non-atmospheric window (ε(5–8μm) = 0.7). In addition to ensuring infrared stealth performance, the films can also withstand high temperatures up to 723K with good high-temperature resistance. Moreover, the proposed design has several advantages, including structural simplicity, ductility, and ease of mass production. This work could bring added convenience to many applications, including infrared stealth, in the future.