光电探测器
材料科学
光电子学
光探测
半导体
存水弯(水管)
有机半导体
光电二极管
计算机科学
物理
气象学
作者
Stefan Zeiske,Nasim Zarrabi,Oskar J. Sandberg,Sam Gielen,Wouter Maes,Paul Meredith,Ardalan Armin
标识
DOI:10.1002/adma.202405061
摘要
Abstract Shortwave‐infrared (SWIR) photodetectors are vital for many scientific and industrial applications including surveillance, quality control and inspection. In recent decades, photodetectors based on organic semiconductors have emerged, demonstrating potential to add real value to broadband and narrowband imaging and sensing scenarios, where factors such as thermal budget sensitivity, large area aperture necessity, cost considerations, and lightweight and conformal flexibility demands are prioritized. It is now recognized that the performance of organic photodetectors (OPDs), notably their specific detectivity, is ultimately limited by trap states, universally present in disordered semiconductors. This work adopts an approach of utilizing these mid‐gap states to specifically create a SWIR photo‐response. To this end, this work introduces a somewhat counter‐intuitive approach of “trap‐doping” in bulk heterojunction (BHJs) photodiodes, where small quantities of a guest organic molecule are intentionally incorporated into a semiconducting donor:acceptor host system. Following this approach, this work demonstrates a proof‐of‐concept for a visible‐to‐SWIR broadband OPD, approaching (and, to some extent, even exceeding) state‐of‐the‐art performance across critical photodetector metrics. The trap‐doping approach is, even though only a proof‐of‐concept currently, broadly applicable to various spectral windows. It represents a new modality for engineering photodetection using the unconventional strategy of turning a limitation into a feature.
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