材料科学
铁电性
记忆电阻器
石墨烯
量子隧道
磁滞
氮化硼
凝聚态物理
光电子学
堆积
电场
纳米技术
极化(电化学)
化学物理
电子工程
量子力学
物理
核磁共振
工程类
电介质
物理化学
化学
作者
Shuang Du,Wenqi Yang,NULL AUTHOR_ID,NULL AUTHOR_ID,Baoqiang Xu,NULL AUTHOR_ID,NULL AUTHOR_ID,NULL AUTHOR_ID,NULL AUTHOR_ID,NULL AUTHOR_ID,NULL AUTHOR_ID
标识
DOI:10.1002/adma.202404177
摘要
Abstract Sliding ferroelectricity in 2D materials, arising from interlayer sliding‐induced interlayer hybridization and charge redistribution at the van der Waals interface, offers a means to manipulate spontaneous polarization at the atomic scale through various methods such as stacking order, interfacial contact, and electric field. However, the practical application of extending 2D sliding ferroelectricity remains challenging due to the contentious mechanisms and the complex device structures required for ferroelectric switching. Here, a sliding memristor based on a graphene/parallel‐stacked hexagonal boron nitride/graphene tunneling device, featuring a stable memristive hysteresis induced by interfacial polarizations and barrier height modulations, is presented. As the tunneling current density increases, the memristive window broadens, achieving an on/off ratio of ≈10 3 and 2 order decrease of the trigger current density, attributed to the interlayer migration of positively charged boron ions and the formation of conductive filaments, as supported by the theoretical calculations. The findings open a path for exploring the sliding memristor via a tunneling device and bridge the gap between sliding ferroelectricity and memory applications.
科研通智能强力驱动
Strongly Powered by AbleSci AI