Exploring the effect of facile i-line photolithography on the structure and physicochemical properties of photosensitive glass ceramics

Photosensitive glass-ceramics exhibit significant potential to replace silicon materials in the microfabrication of micro-electro-mechanical-system (MEMS) devices. However, they are constrained by the limitations of a conventional 320-nm photolithography process. Therefore, developing an ideal industrial i-line (365 nm) photolithography for Li2O-Al2O3-SiO2 photosensitive glass-ceramics is urgently needed. This study initially explores the impact of a facile i-line photolithography on the structure and physicochemical properties of photosensitive glass ceramics. We experimentally showcase a direct, scalable, and straightforward i-line photolithography technique for Li2O-Al2O3-SiO2 photosensitive glass ceramics. Our research concentrates on how the exposure time affects the properties of Li2O-Al2O3-SiO2 photosensitive glass ceramics, particularly regarding nucleation and crystallization. This is achieved by adjusting the exposure time parameter and utilizing XRD, etching experiments, SEM, TEM, and other tests under a i-line light source. By optimizing the exposure process parameters, we also modify the annealing process parameters affecting the crystallization of lithium metasilicate in the exposed areas. Under a treatment process involving an exposure time of 20 minutes, a nucleation temperature of 500°C, a crystallization temperature of 630°C, and a nucleation/crystallization duration of 2 hours, the sample achieves the highest crystal quantity and the optimal thickness-etching rate ratio.