Synthesis and characterization of monolayer Er-doped MoS2 films by chemical vapor deposition

Herein, we firstly present Er-doped MoS2 films with a quasi-closed crucible method in chemical vapor deposition (CVD) system. ErCl3·6H2O is exploited as the dopant and assistant agent. The Raman analysis indicates that doped samples are uniform and high crystalline quality which has two prominent peaks with the minimum FWHM ~4 cm−1 of E2g1. However, Er dopant caused a red-shift in PL spectra. Furthermore, doped samples present a clear absorption edge at 1.8 eV and a small split peak of B exciton, which is attributed to the formation of impurity levels in Er-doped MoS2 based on the DFT calculations.