Characterization of TiN Oxide Doping Antimony Thin Layer with Sol- Gel Spin Coating Method for Electronic Device

Antimony tin oxide coating research has been carried out using a spin sol gel coating method with different doping concentrations (0, 5, 10, 15, 20)%. The results of the study on the morphological structure (SEM) of thin films that have been carried out showed more cracks on the surface of the morphology of thin layers without doping compared to thin layers with doping antimony. The Results of crystal structure of XRD in thin antimony doping tin oxide layer shows the grinding index of tin oxide crystals, 101, 110, 211, 220. In grain size, with increasing antimony doping percentage, the average grain size decreases. The optical properties using UV-Vis in thin films of antimony tin oxide doping show samples including semiconductor materials that can be used as electronic devices as seen from the reduction of this energy gap (3,680 - 3,574) eV. Also seen is an increase in the percentage of antimony doping and repetition of layers, the lower the transmissions value, but the value of absorbance of the thin layer increases.