Conductive BiSb topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching

We report on epitaxial crystal growth and spin Hall effect in BiSb topological insulator thin films. We show that BiSb thin films with conductivity as high as σ ~ 2.5∗10⁵ Ω^-1m^-1 can be epitaxially grown on GaAs(111)A substrate. Meanwhile, evaluation of spin-orbit-torque in Bi_0.9Sb_0.1/MnGa bi-layers reveals a colossal spin Hall angle of θ_SH ~ 52 and a spin Hall conductivity σ_SH ~ 1.3∗10⁷ ℏ/2e Ω^-1m^-1 at room temperature. We demonstrate that BiSb thin films can generate a colossal spin-orbit field of 2.3 kOe/(MA/cm²) and a critical switching current density as low as 1.5 MA/cm² in Bi_0.9Sb_0.1/MnGa bi-layers. BiSb is the best candidate for the first industrial application of topological insulators.