Extracting dark current components and characteristics parameters for InGaAs/InP avalanche photodiodes

The dark current of separate absorption grading charge multiplication (SAGCM) InGaAs/InP avalanche photodiodes has been numerical analyzed. SRH current, TAT current, BBT current and avalanche amplification combined together as the dark current have been extracted by simulation separately. The trend of punch-through voltage and breakdown voltage have been discussed, meanwhile the influence of structure parameters also has been investigated.