凝聚态物理
磁性
铁磁性
磁性半导体
半导体
杂质
材料科学
带隙
空位缺陷
氧化物
石墨烯
物理
纳米技术
量子力学
光电子学
冶金
作者
V. Fleurov,K. Kikoin,Alex Zunger
出处
期刊:Journal of Nanoelectronics and Optoelectronics
[American Scientific Publishers]
日期:2013-09-01
卷期号:8 (5): 466-471
被引量:1
标识
DOI:10.1166/jno.2013.1508
摘要
Ferromagnetic (FM) ordering is observed in intermediate and wide gap dilute magnetic semiconductors as well as in oxides. While the interpretation of the experimental results is often clouded by the existence of non-homogeneous and non ideal nanostructures related to the fact that impurity concentration tends to far exceed the thermodynamic solubility limit, a general physical picture as to the physical origin of the FM interactions has emerged. We discuss the physical mechanism of ferromagnetism mediated by the carriers. We show that what stabilizes the FM spin arrangement is the energy-lowering due to interaction between partially occupied states in the band gap, localized on different transition atoms. These partially occupied states are hybrids between the d impurity band states and host vacancy orbitals, never host-like states as imagined in model Hamiltonian approaches. The theory uses both the model and first principle approach and can be applied to various types of systems such as dilute magnetic semiconductors [(Ga, Mn)As, (Ga, Mn)N, etc.] and oxides [(Ti, Co)O2, (Zn, Mn)O, etc.] as well as nanodevices prepared of these materials.
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