期刊:Applied Physics Letters [American Institute of Physics] 日期:1998-11-16卷期号:73 (20): 2866-2868被引量:558
标识
DOI:10.1063/1.122612
摘要
Bright organic electroluminescent devices were developed using a metal-doped organic layer as an electron-injecting layer at the interface between the cathode and the emitter layer. The typical device structure is a glass substrate/indium-tin oxide/arylamine/tris(8-quinolinolato)Al (Alq)/metal-doped Alq/Al. Dopant metals are highly reactive metals such as Li, Sr, and Sm. A device with Li-doped Alq layer showed high luminance of over 30 000 cd/m2, while a device without the metal-doped Alq layer exhibited only 3400 cd/m2. These results suggest that the Li doping to the Alq layer generates the radical anions of Alq serving as intrinsic electron carriers, which result in low barrier height for electron injection and high electron conductivity of the Li-doped Alq layer.