Self‐Aligned Single‐Crystalline Hexagonal Boron Nitride Arrays: Toward Higher Integrated Electronic Devices

A h-BN self-aligned single-crystal array (SASCA) that exhibits orderly alignment and uniformly distribution is controllably synthesized on a liquid Cu surface for the first time. The h-BN SASCA exhibits highly accordant spatial orientation and homogenous domain size, which can realize highly integrated and individually switching field-effect transistors when serving as a gate dielectric. Circular h-BN single-crystals, which are considered to be the building blocks of h-BN SASCA, are also observed. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.