32.4: Abnormal Turnaround Phenomenon of Threshold Voltage Shifts in Bias‐Stressed a‐Si:H Thin Film Transistor under Extremely High Intensity Illumination

The abnormal threshold voltage (Vth) turnaround behavior of a‐Si:H TFTs was investigated when biased under extremely high intensity illumination. TFTs with various compositions of gate insulator (SiNx) interface layer were fabricated to avoid this abnormal behavior and enhance reliability upon high intensity illumination. 500‐hours RA results confirmed that our optimization strategy can effectively improve the reliability of TFT‐LCDs.