量子点
材料科学
发光二极管
二极管
大气温度范围
光电子学
芯(光纤)
电致发光
发光
化学物理
纳米技术
化学
物理
热力学
图层(电子)
复合材料
作者
Jialin Wu,Lixiang Chen,Yongshuang Zhao,Zuhong Xiong,Wenyu Ji,Yanlian Lei
摘要
Exploring the temperature-dependent electroluminescence (EL) properties of quantum dots (QDs) is not only critical for the fundamental understanding of charge recombination processes in quantum dot light-emitting diodes (QLEDs) but also important to expand their particular applications at cryogenic temperatures. Herein, the temperature-dependent EL properties of typical CdSe/ZnS core/shell QDs were systematically studied for both the standard and inverted QLEDs in the temperature range of 100–300 K. It was found that EL intensity and efficiency were gradually enhanced and exhibited a pronounced blue shifting in EL spectra with the decrease in temperature. We demonstrated that temperature-dependent EL behaviors mainly originated from the inherent properties of QDs, while the different device structures could induce some fine temperature-dependent behaviors on this basis. Moreover, the effective Joule heat dissipation at low temperatures protects the charge transport and QD layers from thermal decomposition and damage, which prolongs the operational lifetime of devices.
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