堆积
双层
结晶学
材料科学
密度泛函理论
相变
插层(化学)
扫描透射电子显微镜
过渡金属
相(物质)
透射电子显微镜
二硫化钼
凝聚态物理
化学
纳米技术
计算化学
无机化学
物理
催化作用
有机化学
冶金
生物化学
膜
作者
Xujing Ji,Degong Ding,Xiaoxiao Guan,Chunyang Wu,Haofu Qian,Juexian Cao,Jixue Li,Chuanhong Jin
出处
期刊:ACS Nano
[American Chemical Society]
日期:2021-09-08
卷期号:15 (9): 15039-15046
被引量:24
标识
DOI:10.1021/acsnano.1c05332
摘要
In this work, the interlayer coupling dependent lithium intercalation induced phase transition in bilayer MoS2 (BL-MoS2) was investigated using an atomic-resolution annual dark-field scanning transmission electron microscope (ADF-STEM). It was revealed that the lithiation induced H → T' phase transition in BL-MoS2 strongly depended on the interlayer twist angle; i.e., the H → T' phase transition occurred in well-stacked H phase BL-MoS2 (with a twist angle of θt = 0°) but not for θt ≠ 0° BL-MoS2. The lithiated BL-MoS2 appeared in homophase stacking, either T'/T' or H/H (locally, no phase transformation) stacking, without any heterophase stacking such as H/T' or T'/H observed. This finding indicated the H → T' phase transition occurred via a domain-by-domain mode rather than layer-by-layer. Up to 15 types of stacking orders were experimentally identified locally in lithiated bilayer T'-MoS2, and the formation mechanism was attributed to the discrete interlayer translation with a unit step of (m/6a, n/6b) (m, n = 0, 1, 2, 3), where a and b were the primitive lattice vectors of T'-MoS2. Our experimental results were further corroborated by ab initio density functional theory (DFT) calculations, where the occurrence of different stacking orders can be quantitatively correlated with the variation of intercalated lithium contents into the BL-MoS2. The present study aids in the understanding of the phase transition mechanisms in atomically thin 2D transition metal dichalcogenides (TMDCs) and will also shed light on the precisely controlled phase engineering of 2D materials for memory applications.
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