钙钛矿(结构)
材料科学
掺杂剂
兴奋剂
平面的
能量转换效率
电子迁移率
图层(电子)
光电子学
化学工程
纳米技术
计算机科学
计算机图形学(图像)
工程类
作者
Chenyue Wang,Zhenhuang Su,Li Chen,Huan Zhang,Wei Hui,Dong Liang,Guanhaojie Zheng,Liujiang Zhang,Zengguang Tang,Wen Wen,Jianxin Tang,Qing Huang,Fei Song,Qi Chen,Xingyu Gao
标识
DOI:10.1016/j.apsusc.2021.151301
摘要
The hole transport layer (HTL) plays a key role in determining the performance of planar perovskite solar cells (PSCs). Poly[bis(4-phenyl)(2,4, 6-triMethylphenyl)aMine] (PTAA), a polymer with good stability, is one of the promising HTL candidates for PSCs. However, notable interfacial carrier recombination limits the performance of PSCs based on PTAA HTL, due to the large gap between the highest-occupied molecular orbital (HOMO) of PTAA and the valance band maximum (VBM) of MAPbI3 perovskite as well as the low intrinsic hole mobility of PTAA. Herein, PTAA was doped by 3 wt% of molybdenum oxide (MoO3) to move down its HOMO by 0.16 eV, leading to a better matching with the MAPbI3 perovskite. Meanwhile, the MoO3 dopant was demonstrated to improve the hole transport in PTAA and hole extraction at the PTAA/perovskite interface. Eventually, the fabricated inverted planar PSCs using PTAA HTL with 3 wt% MoO3 achieved the PCE of 20.06% as compared to that of 17.71% by using pristine PTAA HTL. The present work thus proposes a simple approach to utilize MoO3 as a dopant to substantially improve the molecular HTLs for high-performance PSCs and other perovskite-based optoelectronics.
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