原子层沉积
蚀刻(微加工)
原子层外延
纳米技术
图层(电子)
材料科学
减色
等离子体刻蚀
半导体工业
逐层
工程物理
光电子学
计算机科学
工程类
物理
制造工程
光学
作者
Faiz Rahman,Julian C. Runyon
出处
期刊:IEEE Transactions on Semiconductor Manufacturing
[Institute of Electrical and Electronics Engineers]
日期:2021-11-01
卷期号:34 (4): 500-512
被引量:6
标识
DOI:10.1109/tsm.2021.3112502
摘要
Material growth and etching processes that cause the formation or removal of one atomic or molecular layer at a time are becoming commonplace. Starting from the research labs, such atomic layer process technologies have now migrated to the fab floor. This compact review examines the reasons behind the popularity of these techniques through both a tutorial approach and by citing relevant works that show the practical uses of both additive and subtractive atomic layer processes. Succinct introductions to both atomic layer deposition (ALD) and atomic layer etching (ALE) have been provided. Beyond that, this review examines, in particular, seed layer growth and plasma-enhanced ALD (PEALD), as well as various applications of ALE for the removal of semiconductors, metals and dielectrics.
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