First-principles mobility prediction for amorphous semiconductors

Carrier mobility in amorphous semiconductors remained unpredictable due to random electronic states in the absence of the long-range order in a lattice structure, although amorphous semiconductors have been investigated over several decades and widely used in diverse electronic devices. In this work, we develop a method to predict mobility of disordered systems by virtue of the first-principles calculation without using any empirical parameters. Quantum transport modeling based on the nonequilibrium Green's function formalism enables us to establish a formula to connect first-principles results with amorphous-phase mobility. Finally, the developed approach is quantitatively validated by comparing the theoretical predictions with previously measured mobilities of amorphous metal oxides $({\mathrm{SnO}}_{2},{\mathrm{In}}_{2}{\mathrm{O}}_{3}$, and ZnO) and amorphous silicon. Localization analysis provides further physical insight into a distinct feature between the amorphous metal oxides and amorphous silicon.