CVD growth of large–scale hexagon-like shaped MoSe2 monolayers with sawtooth edge

In this work, we developed a process for preparing hexagon-like shaped MoSe2 monolayers with sawtooth edge via controllable chemical vapor deposition (CVD) technique in atmospheric pressure, resulting in large–scale MoSe2 atom layers with the size of ~20 μm and the height of ~0.8 nm. Raman, Photoluminescence (PL) and transmission electron microscopy (TEM) characterizations affirmed that the grown products possess high quality, and the electrical measurement results of the device with the mobility of 0.21 cm2 V−1 s−1 based on as-obtained products manifest that the underlying applications of MoSe2 in nanoelectronic field.