神经形态工程学
光电二极管
神经促进
突触
光电效应
兴奋性突触后电位
神经科学
材料科学
紫外线
光电子学
计算机科学
人工神经网络
抑制性突触后电位
人工智能
生物
作者
Juxiang Wang,Chen Yang,Lingan Kong,Ying Fu,Yongli Gao,Jia Sun
摘要
In recent years, photoelectronic synaptic devices have emerged as a platform for use in next-generation neuromorphic systems and artificial neural networks (ANNs). In this paper, we report an artificial photoelectronic synapse based on an ion-gel gated In-Zn-O phototransistor. The phototransistor is stimulated by a deep ultraviolet light spike, and it can process and store information in the form of an electric current. Key biological synaptic behaviors were investigated, including excitatory post-synaptic current and paired pulse facilitation. Furthermore, channel conduction can be changed by photoelectric synergy in order to simulate potentiation and depression behavior in the human brain. Most importantly, four forms of spike-timing dependent plasticity learning principles were realized by a photoelectric hybrid stimulation. Our studies provide a path towards hybrid photoelectronic ANNs capable of performing solar-blind sensitive tasks.
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