无杂散动态范围
逐次逼近ADC
比较器
线性
电子工程
奈奎斯特率
CMOS芯片
动态范围
功勋
采样(信号处理)
过采样
12位
噪音(视频)
计算机科学
电气工程
工程类
电压
探测器
人工智能
图像(数学)
计算机视觉
作者
Daiguo Xu,Jiang He-quan,Lei Qiu,Xiaoquan Yu,Jianan Wang,Zhengping Zhang,Can Zhu,Shiliu Xu
出处
期刊:IEEE Transactions on Very Large Scale Integration Systems
[Institute of Electrical and Electronics Engineers]
日期:2019-05-24
卷期号:27 (9): 1990-1997
被引量:10
标识
DOI:10.1109/tvlsi.2019.2912504
摘要
This paper presents a linearity-enhanced 10-bit 160-MS/s successive approximation register (SAR) analog-to-digital converter (ADC) with a high-speed and low-noise comparator. A p-well floating technique for linearity improvement of sampling switch is proposed. The total parasitic capacitance of the sampling switch is depressed compared to conventional structures. Also, the variation of parasitic capacitance is reduced. Furthermore, a substrate voltage boosting technique is proposed to depress the noise of comparator at a high conversion rate. In addition, an improved parallel SAR logic is exhibited to increase the speed of SAR feedback loop and enhance the settling of digital-to-analog converter (DAC). Last, an adaptive sampling technique is utilized to increase the sampling time of SAR ADC. The proposed SAR ADC is fabricated in the 65-nm CMOS process, consuming 2 mW at a 1.2-V power supply. It achieves a signal-to-noise distortion ratio (SNDR) >55.6 dB and spurious-free dynamic range (SFDR) >69 dB at 160 MS/s. The ADC core occupies an active area of 0.023 mm 2 , and the corresponding figure-of-merit (FoM) is 25.4 fJ/conversion-step at Nyquist input.
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