钒
化学计量学
调制(音乐)
化学
材料科学
无机化学
化学工程
物理化学
物理
声学
工程类
作者
Sehwan Song,Dooyong Lee,Young Guk Son,Yesul Choi,Jiwoong Kim,Sang‐Min Han,Jisung Lee,Seokjun Kim,Seung Gyo Jeong,Seong Chu Lim,Jiafeng Yan,Songkil Kim,Woo Seok Choi,Hyun Ho Kim,Jae-Yong Kim,Jong‐Sup Bae,Naohisa Takesue,Chanyong Hwang,Sungkyun Park
标识
DOI:10.1002/smsc.202300171
摘要
Vanadium oxides, such as V 2 O 3 , VO 2 , and V 2 O 5 , have attracted considerable attention because of the fascinating physical properties of each oxidation state. On the other hand, precisely controlling the individual oxidation states is difficult due to the sensitivity of oxygen stoichiometry. This article reports that reactive oxygen annealing (ROA) can systematically change the oxidation state of the vanadium oxide films grown on a c‐Al 2 O 3 substrate compared with typical annealing under O 2 environments. Chemical, structural, electronic, and electrical analysis confirms the evolution of the vanadium oxide phases from V 2 O 3 to V 2 O 3 /VO 2 , VO 2 , VO 2 /V 2 O 5 , and V 2 O 5 , showing that the ROA method can control and tune the oxidation state of the highly oxygen‐sensitive multivalent metal oxides.
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