范德瓦尔斯力
铁电性
材料科学
凝聚态物理
二极管
光电子学
物理
电介质
量子力学
分子
作者
Ping Liu,Yongde Li,De Hou,Hanpeng Zhu,Hecheng Luo,Shuang Zhou,Lujun Wei,Wei Niu,Zhigao Sheng,Weiwei Mao,Yong Pu
摘要
Two-dimensional (2D) ferroelectrics has emerged as a promising building block for nonvolatile memory devices. In this work, we demonstrate the out-of-plane ferroelectricity of 2D CuCrP2S6 (CCPS) at the room temperature and the switchable diode effect in 2D CCPS-based ferroelectric nanodevices. The spontaneous out-of-plane ferroelectric polarization switching and hysteresis loops are directly evidenced by the piezoresponse force microscopy. The intrinsic ferroelectricity originates from the non-centrosymmetric structure of 2D CCPS, which is confirmed by optical second-harmonic generation technique. A ferroelectric tunnel junction was built up by using 2D CCPS as a function layer. The observed diode-like forward rectification effect of CCPS diode is opposite to the direction of remnant polarization, which is attributed to the ferroelectric polarization modulation of Schottky barrier. Our work highlights the great potential of 2D CCPS in ultrathin ferroelectric memory device and motivates the development of multifunctional nanodevices.
科研通智能强力驱动
Strongly Powered by AbleSci AI