Room Temperature Bias-Selectable, Dual-Band Infrared Detectors Based on Lead Sulfide Colloidal Quantum Dots and Black Phosphorus

光电二极管 硫化铅 光电子学 探测器 红外线的 光电探测器 材料科学 红外探测器 量子点 光学 物理
作者
Shifan Wang,Arun Ashokan,Sivacarendran Balendhran,Wei Yan,Brett C. Johnson,Alberto Peruzzo,Kenneth B. Crozier,Paul Mulvaney,James Bullock
出处
期刊:ACS Nano [American Chemical Society]
卷期号:17 (12): 11771-11782 被引量:45
标识
DOI:10.1021/acsnano.3c02617
摘要

A single photodetector capable of switching its peak spectral photoresponse between two wavelength bands is highly useful, particularly for the infrared (IR) bands in applications such as remote sensing, object identification, and chemical sensing. Technologies exist for achieving dual-band IR detection with bulk III–V and II–VI materials, but the high cost and complexity as well as the necessity for active cooling associated with some of these technologies preclude their widespread adoption. In this study, we leverage the advantages of low-dimensional materials to demonstrate a bias-selectable dual-band IR detector that operates at room temperature by using lead sulfide colloidal quantum dots and black phosphorus nanosheets. By switching between zero and forward bias, these detectors switch peak photosensitive ranges between the mid- and short-wave IR bands with room temperature detectivities of 5 × 109 and 1.6 × 1011 cm Hz1/2 W–1, respectively. To the best of our knowledge, these are the highest reported room temperature values for low-dimensional material dual-band IR detectors to date. Unlike conventional bias-selectable detectors, which utilize a set of back-to-back photodiodes, we demonstrate that under zero/forward bias conditions the device’s operation mode instead changes between a photodiode and a phototransistor, allowing additional functionalities that the conventional structure cannot provide.
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