Quantum transport simulations of monolayer β-AgI: a prospective nanochannel material in sub-1 nm gate-length MOSFETs

This study examines quantum transport in monolayer β-AgI MOSFETs (sub-1 nm gate) using DFT + NEGF. The stable β-AgI monolayer, with a 2.18 eV bandgap, reduces leakage. Simulations confirm its potential for low-power nanoelectronics, meeting ITRS-2013.