光电二极管
响应度
光电子学
占空比
材料科学
偏压
信号(编程语言)
时间常数
上升时间
光敏性
光刻胶
光学
光电探测器
电压
物理
计算机科学
电气工程
量子力学
程序设计语言
工程类
作者
M. Campajola,P. Di Meo,F. Di Capua,P. Branchini,A. Aloisio
出处
期刊:Sensors
[MDPI AG]
日期:2023-02-21
卷期号:23 (5): 2386-2386
被引量:1
摘要
The photosensitivity, responsivity, and signal-to-noise ratio of organic phototransistors depend on the timing characteristics of light pulses. However, in the literature, such figures of merit (FoM) are typically extracted in stationary conditions, very often from IV curves taken under constant light exposure. In this work, we studied the most relevant FoM of a DNTT-based organic phototransistor as a function of the timing parameters of light pulses, to assess the device suitability for real-time applications. The dynamic response to light pulse bursts at ~470 nm (close to the DNTT absorption peak) was characterized at different irradiances under various working conditions, such as pulse width and duty cycle. Several bias voltages were explored to allow for a trade-off to be made between operating points. Amplitude distortion in response to light pulse bursts was also addressed.
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