材料科学
光致发光
热稳定性
量子产额
光电子学
图层(电子)
结晶
化学工程
复合数
原子层沉积
纳米技术
复合材料
光学
荧光
物理
工程类
作者
Ching Liu,Wen‐Tse Huang,Juqing Li,Yu‐Chun Lee,Tzong‐Liang Tsai,Fang‐Chun Shen,Wen‐Wei Wu,Ru‐Shi Liu,Xuejie Zhang
标识
DOI:10.1002/adom.202300963
摘要
Abstract Perovskite quantum dots usually possess excellent optical properties, such as high color purity, high photoluminescence quantum yield, and tunable emission wavelength. However, their relatively low stability against heat, water, oxygen, and light hinders their practical applications in the field of optoelectronic devices. Herein, melt‐quenching and heat treatment crystallization methods are used to fabricate the CsPbBr 3 @glass. Atomic layer deposition and the sol–gel method are applied to encapsulate the CsPbBr 3 @glass with a dense SiO 2 layer and hydrophobic SiO 2 layer, respectively, to further improve the water resistance, thermal reversibility of photoluminescence, and photostability. The CsPbBr 3 @glass@ASG can be synthesized with the triple layer encapsulation of the glass matrix, dense SiO 2 layer, and hydrophobic SiO 2 layer. During the water resistance test for seven weeks, CsPbBr 3 @glass@ASG can preserve ≈100% of initial PL intensity. Similarly, it can preserve ≈100% of PL intensity after five continuous heating–cooling cycles between 30 and 100 °C. In addition, the internal and external quantum efficiencies of CsPbBr 3 @glass@ASG can still be maintained at 42.0% and 33.7%, respectively. Results indicate that CsPbBr 3 @glass@ASG can provide a balance between optical properties and extrinsic stability successfully, thereby becoming a potential candidate material for practical applications related to optoelectronic devices in the future.
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