神经形态工程学
材料科学
突触
人工神经网络
异质结
抑制性突触后电位
光电子学
人工智能
神经科学
计算机科学
生物
作者
Shuyi Sun,Tao Zhang,Shuoqi Jin,Xinhua Pan,Jianguo Lü,Zhizhen Ye,Bin Lu
标识
DOI:10.1002/adfm.202401403
摘要
Abstract Optical synaptic devices are considered a preferred substitute to electrical synapses for low‐energy, high‐efficiency neuromorphic computing (NC). However, most optical synapses irreversible optical response severely restricts their application scenarios. In this study, a fully photon‐modulated synaptic device constructed from Si‐doped beta‐gallium oxide ( β ‐Ga 2 O 3 )/ZnO heterojunction is demonstrated. The device exhibits reversible conductance changes and mimics a range of synaptic behaviors, which are modulated by two different wavelengths (255 and 370 nm) of UV light. Owing to the device's plasticity, four types of logic functions including “AND”, “OR”, “NOR” and “NAND” are implemented in the device by optical stimulation. Furthermore, an artificial neural network (ANN) is simulated based on the device's excitatory and inhibitory characteristics, and an optical programming scheme is employed to enhance the network's performance, resulting in a high recognition rate of 95.5% for handwritten digits. The fully photon‐modulated synapse development strategy and programming scheme, as presented in this work, advance the utilization of optical artificial synapses in ANN.
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