Ser Choong Chong,Jason Au Keng Yuen,Vasarla Nagendra Sekhar,Ismael Cereno Daniel,Mishra Dileep Kumar,Vempati Srinivasa Rao
标识
DOI:10.1109/eptc59621.2023.10457883
摘要
Wafer to wafer hybrid bonding has been established to form fine pitch interconnections for high density I/O applications [1], [2]. However, this approach has limitation that demands same interconnects layout and same chip sizes for both wafers. In addition, yield of the bonded wafer is affected severely from the individual yield of the wafer and the location of the chip with good yield. Chip to Wafer hybrid bonding is an attractive approach to mitigate the yield issue and the different design aspect from the chip and the wafer. However, it is not an easy approach as it demands absolute cleanliness of bonding surfaces for both chip and the wafer throughout the assembly processes. This article demonstrates reliability assessment of chip to wafer bonding approach. A good yield of chip to wafer hybrid bonding was obtained and the bonding interface remained intact throughout the thermal cycling tests and moisture sensitive test.