Weak antilocalization in the topological semimetal candidate YbAuSb.

Abstract We report a study of the magnetic and magnetotransport properties of YbAuSb single crystals, which were grown using the bismuth flux. The x-ray diffraction data indicate that YbAuSb crystallizes in LiGaGe-type hexagonal structure with space group P 6 3 mc . Our magnetic measurements revealed that YbAuSb is nonmagnetic with a divalent state of ytterbium ion. The temperature-dependent electrical resistivity exhibits a metallic behavior. A cusp-like feature in transverse and longitudinal magnetoresistance is observed at the low field regime. This cusp-like feature is attributed to the weak antilocalization (WAL) effect, which is more prominent at low temperatures. The transverse magnetoconductivity in low field region follows semiclassical model ∼ B , which is consistent with the presence of WAL phenomena. The WAL effect in transverse and longitudinal magnetoconductance is well explained using the modified Hikami–Larkin–Nagaoka and generalized Altshuler–Aronov model, respectively. The Hall resistivity shows a linear field dependence with a positive slope, suggesting hole charge carriers dominate in electrical transport. The calculated carrier density and mobility are in the order of 10 20 cm −3 and 10 2 cm 2 V −1 s −1 , respectively.