电迁移
导线
缩放比例
工程物理
电流密度
物理
电流(流体)
纳米技术
材料科学
热力学
复合材料
量子力学
几何学
数学
作者
Paul S. Ho,Thomas Kwok
标识
DOI:10.1088/0034-4885/52/3/002
摘要
This paper provides an overview on the current understanding of electromigration in metals. The discussion is first focused on studies in bulk metals and alloys. This part includes a thermodynamic formulation of electromigration, a kinetic analysis of the atomic processes and a review of the theory. In addition, experimental results in interstitial and substitutional systems are summarised. The second part of the paper reviews the studies in metallic thin films. This emerged as an important area of electromigration studies since the late 1960s when electromigration damage was found to cause failure of conductor lines in integrated circuits. The discussion will review first the basic nature of electromigration in thin films with emphasis on the role of grain boundaries in mass transport and damage formation. Then the materials issues of electromigration will be explored according to the scaling trends in VLSI technology. Finally, the recent results of electromigration in fine lines and device contacts of dimensions in the micrometre range are discussed.
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